Comparative Study of Silicon and Germanium Doping-less Tunnel Field Effect Transistors

Author(s):

Ancy P Mani , SAINTGITS COLLEGE OF ENGINEERING COLLEGE; Ajith Ravindran, SAINTGITS COLLEGE OF ENGINEERING COLLEGE; Shajimon K John, SAINTGITS COLLEGE OF ENGINEERING COLLEGE; Arathy Varghese, SAINTGITS COLLEGE OF ENGINEERING COLLEGE; Praveen C S, SAINTGITS COLLEGE OF ENGINEERING COLLEGE

Keywords:

Band to band tunnelling, charge plasma, Double gate, high-k dielectric, Tunnel Field Effect Transistor

Abstract:

An alternative to conventional field effect transistors Tunnel Field Effect Transistor (TFET) provides a very steep sub threshold slope and low leakage current. Doping less Silicon TFET avoids certain challenges faced by TFET like effects of Random Dopant Fluctuations (RDF), like an unacceptably large increase in the OFF-state current and need of high temperature for doping process and related process like ion implantation and annealing techniques during its fabrication. The performance of the device can be improved by using various performance boosters such as material engineering, barrier engineering, gate stack engineering, structural engineering etc.

Other Details:

Manuscript Id	:	IJSTEV2I5067
Published in	:	Volume : 2, Issue : 5
Publication Date	:	01/12/2015
Page(s)	:	144-149

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