Effect of fin shape on GIDL and subthreshold leakage currents

Author(s):

Daughty Abraham , Saintgits College of Engineering; Abraham George, Saintgits College of Engineering; Deepa Gopinadh, Saintgits College of Engineering

Keywords:

FinFETs, Gate Induced Drain Leakage, Subthreshold leakage

Abstract:

FinFETs have emerged as the solution to short channel effects at the 22-nm technology node and beyond. Here, the effect of fin shape on the leakage currents like Gate Induced Drain Leakage and subthreshold leakage is evaluated. The fin shape can be changed by varying the top width of the fin. Hence, the leakage currents are verified using their expressions for both rectangular and triangular FinFETs. The effects of oxide thickness, drain doping concentration and mobility on these leakage currents are also studied.

Other Details:

Manuscript Id	:	IJSTEV1I10050
Published in	:	Volume : 1, Issue : 10
Publication Date	:	01/05/2015
Page(s)	:	135-145

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