A Multi Threshold Technique Based 12T SRAM Cell for High Stability and Low Power Dissipation
Author(s):
Diwakar Prasad Tiwari , India IES College of Technology, Bhopal, India; Ashish Raghuwanshi, India IES College of Technology, Bhopal, India
Keywords:
Transmission Gate, Leakage Low power, Static noise margin, SRAM Swing Voltage, Tanner tool
Abstract:
Framework on chip gadgets request segment which devour less power and gives less deferral in circuit. Versatile processors utilize memory component as a noteworthy part in their chip. This paper shows SRAM with transmission entryway rationale which gives less postponement and woks under low power supply. New SRAM configuration gives 0.40* lessening in power1.Also this SRAM cell gives 15*,0.90* change in write 0 and write1 than regular/conventional 12-T SRAM cell Tanner Tool is utilized for schematic outline and format configuration reason.
Other Details:
Manuscript Id | : | IJSTEV4I4029
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Published in | : | Volume : 4, Issue : 4
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Publication Date | : | 01/11/2017
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Page(s) | : | 45-48
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