A Multi Threshold Technique Based 12T SRAM Cell for High Stability and Low Power Dissipation

Diwakar Prasad Tiwari; Ashish Raghuwanshi

CALL FOR PAPERS : December-2022

Submission Last Date

25-December-22

Submit Manuscript Online

FOR AUTHORS

FOR REVIEWERS

ARCHIEVES

DOWNLOADS

Open Access

A Multi Threshold Technique Based 12T SRAM Cell for High Stability and Low Power Dissipation

Author(s):

Diwakar Prasad Tiwari , India IES College of Technology, Bhopal, India; Ashish Raghuwanshi, India IES College of Technology, Bhopal, India

Keywords:

Transmission Gate, Leakage Low power, Static noise margin, SRAM Swing Voltage, Tanner tool

Abstract:

Framework on chip gadgets request segment which devour less power and gives less deferral in circuit. Versatile processors utilize memory component as a noteworthy part in their chip. This paper shows SRAM with transmission entryway rationale which gives less postponement and woks under low power supply. New SRAM configuration gives 0.40* lessening in power1.Also this SRAM cell gives 15*,0.90* change in write 0 and write1 than regular/conventional 12-T SRAM cell Tanner Tool is utilized for schematic outline and format configuration reason.