A BRIEF INSIGHT ON CHEMICAL VAPOR DEPOSITION PROCESSES

Author(s):

Dr. P. Dinesh Sankar Reddy , JNTUA College of Engineering (Autonomous), Anantapuramu

Keywords:

Chemical Vapor Deposition, Kinetics, Thin Films, Reaction Engineering

Abstract:

Processing of the electronic materials for electronic and optoelectronic devices, advanced materials for bio and space research, combines a fascinating variety of physical transport processes and chemical reactions that raise new challenges to “chemical reaction engineering”. The rapid and extensive growth in microelectronics and space technology owes much to the scientists and engineers concerned with solving materials and processing materials associated with achieving new device structures and ever-higher levels of integration. Fabrication of these components involves a variety of complex chemical processes, which can be divided in to the unit operations like “Bulk crystal growth, Liquid phase epitaxy, Physical vapor deposition, Chemical vapor deposition, packaging etc…. Among these “Chemical vapor Deposition” (CVD) is perhaps the only fabrication processes that lend itself most easily to chemical reaction engineering analysis. This atomistic deposition method can provide heavy metals with structural control at atomic and nanometer scale level. This is a review paper which gives a brief view of the fundamental aspects of “Chemical vapor Deposition” (CVD), kinetics and deposition mechanism. Along with these this paper also reviews the different types of chemical vapor deposition processes, which are based on the type of precursors used and different heating methods. The recent applications of CVD in microelectronic fabrication, coating of metals, bio-compatible materials and advanced material technology, the advantages and limitations of CVD are also discussed.

Other Details:

Manuscript Id	:	IJSTEV2I7087
Published in	:	Volume : 2, Issue : 7
Publication Date	:	01/02/2016
Page(s)	:	174-178

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