Effect of Annealing Temperature on Optical and Electrical Properties of Electron Beam Evaporated NiO Thin Films
Author(s):
A. Madhavi , S.V. University; G. S. Harish, S.V. University; P. Sreedhara Reddy, S.V.University
Keywords:
atomic force microscopy, band gap, electron beam evaporation, NiO thin films, SEM, XRD
Abstract:
Nickel oxide (NiO) thin films were prepared by electron beam evaporation technique and studied various properties at different annealing temperatures. The surface morphology of the deposited films was characterized by scanning electron microscopy (SEM) and the compositional analysis of the deposited films was studied by energy dispersive spectroscopy (EDAX). The effect of the annealing process on the topography of the prepared NiO thin films was studied by atomic force microscope (AFM) at room temperature. The optical band gap of the as-deposited film was increased to 3.68 eV with the increase of annealing temperature up to 400oC, thereafter decreased at higher annealing temperature. Thin film samples annealed at 400oC showed decreased resistivity compared to other samples.
Other Details:
| Manuscript Id | : | IJSTEV2I11276
|
| Published in | : | Volume : 2, Issue : 11
|
| Publication Date | : | 01/06/2016
|
| Page(s) | : | 742-747
|
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